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86801 |
Wen-Ting Zhang(张文婷), Fen-Xia Wang(王粉霞), Yu-Miao Li(李玉苗), Xiao-Xing Guo(郭小星), Jian-Hong Yang(杨建红) |
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Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer |
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Chin. Phys. B
2019 Vol.28 (8): 86801-086801
[Abstract]
(523)
[HTML 1 KB]
[PDF 850 KB]
(108)
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